feb.1999 mitsubishi transistor modules QM20TG-9B medium power switching use insulated type outline drawing & circuit diagram dimensions in mm application air conditioner, small to medium size inverters QM20TG-9B ? i c collector current .......................... 20a ? v cex collector-emitter voltage ........... 500v ? h fe dc current gain............................. 250 ? insulated type 2 f 5.4 8 8 8 8 8 16.5 16 16 16 16.5 76 6 2?6 25 39 16 p n bup eup bvp evp bwp ewp w bun bvn bwn e(? 64 17 16 26.5 6.5 p n e(? bup eup u bun bvp evp v bvn bwp ewp w bwn 88 label tab#250, t=0.8 tab#110, t=0.5 v u
feb.1999 conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute mounting screw m5 typical value ratings 450 500 500 7 20 20 100 1 200 C40~+150 C40~+125 2000 1.47~1.96 15~20 70 absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight unit v v v v a a w a a c c v nm kgcm g mitsubishi transistor modules QM20TG-9B medium power switching use insulated type electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 250 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =500v, v eb =2v v cb =500v, emitter open v eb =7v i c =20a, i b =80ma Ci c =20a (diode forward voltage) i c =20a, v ce =2v v cc =250v, i c =20a, i b1 =120ma, Ci b2 =0.4a transistor part (per 1/6 module) diode part (per 1/6 module) conductive grease applied (per 1/6 module) typ. max. 1.0 1.0 40 2.0 2.5 1.5 2.0 10 2.0 1.25 2.5 0.55
feb.1999 0 10 ? 10 ? 10 ? 10 0 10 7 5 4 3 2 ? 10 7 5 4 3 2 1.0 1.4 1.8 2.2 2.6 3.0 v ce =2.0v t j =25? 3 10 7 5 4 3 2 2 10 7 5 4 3 2 0 10 23457 1 10 23457 2 10 2 v ce =2.0v v ce =5.0v t j =25? t j =125? 50 40 30 20 10 0 012345 t j =25? i b =20ma i b =10ma i b =80ma i b =200ma i b =400ma 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 0 10 23457 1 10 2 34 57 2 10 v be(sat) v ce(sat) t j =25? t j =125? i b =80ma 7 5 3 2 7 5 3 2 7 5 3 5 4 3 2 1 0 3 2 t j =25? t j =125? i c =10a i c =30a i c =20a 1 10 7 5 4 3 2 0 10 7 5 4 3 23457 1 10 23457 2 10 2 0 10 ? 10 t j =25? t j =125? t on t s t f i b2 =?00ma i b1 =120ma v cc =250v performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM20TG-9B medium power switching use insulated type
feb.1999 ? 10 ? 10 ? 10 0 10 1 10 0 10 2 10 1 10 0 10 ? 10 0 10 1 10 2 10 3 10 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 50 0 0 100 300 400 500 10 20 30 40 200 t j =125? i b2 =?a ? 10 1 10 7 5 4 3 2 0 10 7 5 4 3 23457 0 10 23 45 7 1 10 2 ? 10 t s t f t j =25? t j =125? i c =20a i b1 =120ma v cc =250v 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 4 4 4 t c =25? 100? 200? 1ms dc 50? 7 5 3 2 7 5 3 2 7 5 3 2 0.2 0.4 0.6 1.0 1.2 1.4 1.6 2.0 0 7 5 3 2 0.8 1.8 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 0.4 0.8 1.2 1.6 2.0 t j =25? t j =125? non-repetitive collector dissipation second breakdown area switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM20TG-9B medium power switching use insulated type z th (jCc) ( c/ w)
feb.1999 ? 10 ? 10 ? 10 0 10 1 10 0 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 40 80 120 160 200 60 100 140 180 20 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 10 23457 1 10 23457 2 10 2 1 10 0 10 2 2 i rr q rr t rr t j =25? t j =125? i b2 =?00ma i b1 =120ma v cc =250v 7 5 3 2 7 5 3 2 7 5 3 2 2.0 0 3 2 7 5 3 2 4 4 4 4 45 3.2 2.8 2.4 1.2 1.6 0.8 0.4 i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM20TG-9B medium power switching use insulated type z th (jCc) ( c/ w) t rr ( m s)
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